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n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 4 3 5 0 k p f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n n - c h a n n e l m o s f e t 3 0 v / 6 0 a , r d s ( o n ) = 7 . 5 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 1 1 . 5 m w ( t y p . ) @ v g s = 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n a v a l a n c h e r a t e d r e l i a b l e a n d r u g g e d l e a d f r e e a v a i l a b l e ( r o h s c o m p l i a n t ) n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s 1 0 0 % m a t t e i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d i e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a - t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , o r d e c k t o p c o m p u t e r . g d s s s d d d apm4350 handling code temp. range package code package code kp : kpak operating junction temp. range c : -55 to 150 c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm4350 kp : apm4350 xxxxx xxxxx - date code lead free code s g s s d d d d s g s s d d d d
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 2 a p m 4 3 5 0 k p a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain - source voltage 30 v gss gate - source voltage 20 v t j maximum junction temperature 150 c t stg storage temperature range - 55 to 150 c i s diode continuous forward current t c =25 c 50 a t c =25 c 1 4 0 i d p 300 s pulse drain current tested t c =100 c 8 0 a mounted on large heat sink t c =25 c 60 i d continuous drain current t c =100 c 35 a t c =25 c 50 p d maximum power dissipation t c =100 c 20 w r q jc thermal resistance - junction to case 2.5 c /w mounted on pcb of 1in 2 pad area t a = 25 c 13.5 i d continuous drain current t a = 100 c 8.5 a t a = 25 c 2.5 p d maximum power dissipation t a = 100 c 1 w r q ja thermal resistance - junction to ambient 50 c /w mounted on pcb of minimum footprint t a = 25 c 10 i d continuo us drain current t a = 100 c 6 a t a = 25 c 1.5 p d maximum power dissipation t a = 100 c 0.5 w r q ja thermal resistance - junction to ambient 75 c /w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 3 a p m 4 3 5 0 k p e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 4350kp symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 30 v v ds =2 4 v, v gs =0v 1 i dss zero gate voltage drain current t j = 8 5 c 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds =250 m a 1.3 1.8 2.5 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =10v, i ds = 30 a 7.5 9 r ds(on) a drain - source on - state resistance v gs = 4. 5v, i ds = 15 a 11.5 14.5 m w diode characteristics v sd a diode forward voltage i sd = 15 a, v gs =0v 0.75 1.1 v t rr reverse recovery time 11 ns qrr reverse recovery charge i d s =15a, dl sd /dt = 100a/ m s 3 nc gate charge characteristics b q g total gate charge 28 39 q gs gate - source charge 4 q gd gate - drain charge v ds =1 5 v, v gs = 10 v, i d s = 30 a 9 nc dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.6 w c iss input capacitance 1660 c oss output capacitance 260 c rss reverse transfer capacitance v gs =0v, v ds =15v, f requency =1.0mhz 170 pf t d(on) turn - on delay t ime 18 33 t r turn - on rise time 15 28 t d(off) turn - off delay time 47 86 t f turn - off fall time v dd =1 5 v, r l =1 5 w , i d s =1a, v gen = 10v , r g =6 w 22 41 ns note ?g a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 4 a p m 4 3 5 0 k p t y p i c a l c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) normalized transient thermal resistance 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 2 mounted on 1in 2 pad r q ja :50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 t c =25 o c 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 t c =25 o c,v g =10v 0.1 1 10 80 0.1 1 10 100 400 t c =25 o c 1ms 1s 10ms 100ms dc rds(on) limit
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 5 a p m 4 3 5 0 k p r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s g a t e - s o u r c e o n r e s i s t a n c e v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 5.5v 4.5v 3.5v 4v 3v 5v v gs = 6,7,8,9,10v 0 20 40 60 80 100 120 2 4 6 8 10 12 14 16 18 20 v gs =10v v gs =4.5v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds =250 m a 1 2 3 4 5 6 7 8 9 10 4 6 8 10 12 14 16 18 i d =30a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 6 a p m 4 3 5 0 k p v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.2 1 10 100 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 frequency=1mhz crss coss ciss -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 7.5m w v gs = 10v i ds = 30a 0 5 10 15 20 25 30 0 2 4 6 8 10 v ds = 15v i ds = 30a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 7 a p m 4 3 5 0 k p a v a l a n c h e t e s t c i r c u i t a n d w a v e f o r m s dut 0.01 w tp v dd v ds l i l r g s w i t c h i n g t i m e t e s t c i r c u i t a n d w a v e f o r m s v dd r d dut v gs v d s r g tp t d (on) t r t d (off) t f v gs v ds 90% 10%
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 8 a p m 4 3 5 0 k p p a c k a g i n g i n f o r m a t i o n kpap (reference jedec registration ms-012) p h y s i c a l s p e c i f i c a t i o n s terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb, 100%sn ). lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3. 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 e1 e a e b c f1 f h k g g1 a d min. max. min. max. a 1.00 1.20 0.039 0.047 b 0.38 0.51 0.015 0.020 c 0.19 0.25 0.007 0.010 d 4.80 5.00 0.189 0.197 e 5.90 6.10 0.232 0.240 e1 5.696 5.796 0.224 0.228 e f 0.052 0.152 0.002 0.006 f1 0.352 0.452 0.014 0.018 g 0.052 0.152 0.002 0.006 g1 0.352 0.452 0.014 0.018 h 3.491 3.691 0.137 0.145 k 1.60 - 0.063 - a 0 12 0 12 dim 1.27 bsc 0.050 bsc millimeters inches
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 9 a p m 4 3 5 0 k p r e f l o w c o n d i t i o n (ir/convection or vpr reflow) c l a s s i f i c a t i o n r e f l o w p r o f i l e s sn - pb eutectic assembly pb - free assembly profile feature large body small body large body small body average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 15 0 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds tsmax to t l - ramp - up rate 3 c/second max time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak temperature ( tp) 225 +0/ - 5 c 240 +0/ - 5 c 245 +0/ - 5 c 250 +0/ - 5 c tim e within 5 c of actual peak temperature (tp) 10 - 30 seconds 10 - 30 seconds 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p x
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 0 a p m 4 3 5 0 k p p a c k a g e r e f o l w c o n d i t i o n s pkg. thickness 3 2.5mm and all bags pkg. thickness < 2.5mm and pkg. volume 3 350mm 3 pkg. thickness < 2.5mm and pkg. volume < 350mm 3 convection 220 +5/ - 0 x c convection 235 +5/ - 0 x c vpr 215 - 219 x c vpr 235 +5/ - 0 x c ir/convection 220 +5/ - 0 x c ir/convection 220 + 5/ - 0 x c r e l i a b i l i t y t e s t p r o g r a m test item method description solderability mil - std - 883d - 2003 245c,5 sec holt mil - std 883d - 1005.7 1000 hrs bias @125c pct jesd - 22 - b, a102 168 hrs, 100% rh, 121c tst mil - std 883d - 1011.9 - 65c ~ 150c, 200 cycles c a r r i e r t a p e & r e e l d i m e n s i o n s t ao e w po p ko bo d1 d f p1 a j b t2 t1 c
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 1 a p m 4 3 5 0 k p c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 c a r r i e r t a p e & r e e l d i m e n s i o n s ( c o n t . ) application a b c j t1 t2 w p e 330 1 62+1.5 12.75+ 0.15 2 0.5 12.4 0.2 2 0.2 12 0. 3 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sop - 8 5.5 1 1.55+0.1 1.55+0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0. 1 2.1 0.1 0.3 0.013 c o v e r t a p e d i m e n s i o n s application carrier width cover tape width devices per reel sop - 8 12 9.3 2500

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